IRG4BC10UPBF Details_IRG4BC10UPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	8.5 A
Current - Collector Pulsed (Icm)	34 A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 5A
Power - Max	38 W
Switching Energy	140µJ (on), 120µJ (off)
Input Type	Standard
Gate Charge	15 nC
Td (on/off) @ 25°C	40ns/87ns
Test Condition	480V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr)	28 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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