MCP14E11-E/P Details_MCP14E11-E/P PDF Document_Microchip Technology-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	Low-Side
Channel Type	Independent
Number of Drivers	2
Gate Type	IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply	4.5V ~ 18V
Logic Voltage - VIL, VIH	0.8V, 2.4V
Current - Peak Output (Source, Sink)	3A, 3A
Input Type	Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap)	-
Rise / Fall Time (Typ)	25ns, 25ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	8-DIP (0.300", 7.62mm)
Supplier Device Package	8-PDIP

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