ZTX325STOB Details_ZTX325STOB PDF Document_Diodes Incorporated-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	1.3GHz
Noise Figure (dB Typ @ f)	5dB @ 500MHz
Gain	53dB
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 2mA, 1V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	E-Line-3, Formed Leads
Supplier Device Package	E-Line (TO-92 compatible)

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