SD1731 Details_SD1731 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	55V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	13dB
Power - Max	233W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 10A, 6V
Current - Collector (Ic) (Max)	20A
Operating Temperature	200°C (TJ)
Mounting Type	Surface Mount
Package / Case	M174
Supplier Device Package	M174

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