MRF553T Details_MRF553T PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	16V
Frequency - Transition	175MHz
Noise Figure (dB Typ @ f)	-
Gain	11.5dB
Power - Max	3W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 250mA, 5V
Current - Collector (Ic) (Max)	500mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	Power Macro
Supplier Device Package	Power Macro

Other

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