SD1332-05H Details_SD1332-05H PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	5.5GHz
Noise Figure (dB Typ @ f)	2.5dB @ 1GHz
Gain	17dB
Power - Max	180W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 14mA, 10V
Current - Collector (Ic) (Max)	30A
Operating Temperature	200°C
Mounting Type	Surface Mount
Package / Case	M150
Supplier Device Package	M150

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