BFS 386L6 E6327 Details_BFS 386L6 E6327 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	14GHz
Noise Figure (dB Typ @ f)	1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Gain	10dB ~ 14.5dB
Power - Max	210mW, 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 15mA, 3V / 60 @ 40mA, 3V
Current - Collector (Ic) (Max)	35mA, 80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-XFDFN
Supplier Device Package	TSLP-6-1

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